| PART |
Description |
Maker |
| BLF6G20-40 |
Power LDMOS transistor BLF6G20-40<SOT608A (CDFM2)|<<http://www.nxp.com/packages/SOT608A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G22-45 |
Power LDMOS transistor
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| LB501A |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF6G10LS-200R |
Power LDMOS transistor
|
NXP Semiconductors
|
| LP702-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF7G20L-200 |
Power LDMOS transistor
|
Philips Semiconductors
|
| BLF7G24LS-100 BLF7G24L-100 |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
